15.4 Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors

Stress and Characterization Strategies to Assess Oxide Breakdown in High-Voltage GaN Field-Effect Transistors

Evidence of space charge limited flow in the gate current of AlGaN/GaN high electron mobility transistors

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High-voltage field effect transistors with wide-bandgap -Ga2O3 nanomembranes

Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high- electron-mobility transistors by use of ac transconductance method

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN substrate interface - Electronics Letters

The authors investigate the effect of the thermal boundary resistance between the GaN layer and the substrate on the current–voltage characteristics of GaN MESFETs. Using material specific models for carrier drift-diffusion and thermal conductivity the authors determine the dependence of the breakdown voltage on thermal boundary resistance. The mechanism of the thermal breakdown in GaN transist...